Search results for "Ferroelectric ceramics"
showing 10 items of 28 documents
The effect of bias field on the dielectric response of Ba0.95Pb0.05TiO3+Со2О3
2021
The nature of the dielectric response in ferroelectric ceramics Ba0.95Pb0.05TiO3+Со2О3 (BPTC) under the influence of a constant bias field EB in the phase transition region is studied. It is found ...
Relaxation of polarization in (K0.5Na0.5)(Nb0.93Sb0.07)O3 ferroelectric ceramics modified by BaTiO3
2017
ABSTRACTA study of low-frequency relaxation of polarization in conventionally prepared ceramic compounds of (1-x)(K0.5Na0.5)(Nb0.93Sb0.07)O3+xBaTiO3+0.5mol.%MnO2 (x = 0.02, 0.04) examined over a wide temperature range is reported. Anomalous behavior of the temperature dependence of the coercive field Ec(T) is detected in the temperature range of the orthorhombic to tetragonal phase transition. The observed features of polarization are assigned to dynamics of the domain structure at the temperature range of phase coexistence.
Dielectric properties of potassium–sodium niobate ceramics at low frequencies
2016
ABSTRACTA study of the effects of ageing history on the electrical properties of lead-free ferroelectric ceramics of (K0.5Na0.5)(Nb1−xSbx)O3 + 0.5 mol% MnO2 and (K0.5Na0.5)(Nb1−xTax)O3 + 0.5 mol%MnO2 for x = 0.05 is reported. The samples after storage at a constant temperature have been subject to infra-low-frequency electric field and radiation. Differences of the photoelectric response between the two examined compounds were found and the restoration of polarisation in the aged ceramic materials by cycles of applied field is discussed.
CO2 laser-induced structure changes in lead zirconate titanate Pb(Zr0.58Ti0.42)O3 sol–gel films
2003
Based on absorption spectra of lanthanum modified lead zirconate titanate Pb0.9La0.1(Zr0.65Ti0.35)O3 (PLZT10/65/35) ferroelectric ceramics an idea of local and selective treatment of lead zirconite titanate Pb(ZrXTi1−X)O3 (PZT) sol–gel film in the multi-layer structure by CO2 laser radiation was formulated. The possibility to obtain PZT perovskite film on the SiO2/Si substrate by irradiation with CO2 laser was shown experimentally. X-ray studies revealed the PZT perovskite structure ratio growth at the expenses of pirochlore structure with an increased power density of laser radiation.
ELECTRICAL PROPERTIES OF LEAD FERROTANTALATE CERAMICS
2009
ABSTRACT Perovskite structures with high dielectric constants and magnetic properties play an important role in micro- and optoelectronics and have numerous practical applications. Relaxor type ferroelectric ceramics PbFe1/2Ta1/2O3 with perovskite structure was subject of present studies. Pyrochlore free lead ferrotantalate ceramics were produced by solid state technology from oxides. Low- and infra-low frequency studies of dielectric properties of PbFe1/2Ta1/2O3 ceramics have revealed considerable infra-low frequency dispersion at temperatures above the temperature of maximum dielectric permittivity. The observed dispersion described by lemniscates is due to a considerable Maxwell-Wagner r…
Features of Phase Diagrams of Binary Pb(B<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-PbTiO<sub>3</sub&g…
2001
Dielectric spectra of electron-irradiated PSN ceramics
1997
The influence of electron-irradiation on the dielectric properties of transparent PSN ferroelectric ceramics is studied by low (LF) and infralow (ILF) frequency spectrum analysis. Redistribution of relaxation frequencies caused by electron-irradiation has been discovered and is related to pinning impacts of the radiation-induced defects.
Production and Properties of Lead Scandoniobate Ferroelectric Ceramics Doped with Rare-Earth Oxides
2001
Modified PbSc<sub>1/2</sub>Nb<sub>1/2</sub>O<sub>3</sub> Ferroelectric Ceramics
1997
Compositional and Optical Gradient in Films of PbZrxTi1-xO3 (PZT) Family
2011
Pb(ZrxTi1-x)O3 (PZT) (x = 0-1) films have attracted the attention of researchers for the past 30 years due to their excellent ferroelectric (FE) and electromechanical properties, which have led to the commercialization of thin PZT films for ferroelectric random access memory (FeRAM), forming a market of several millions USD annually. Ferroelectricity of perovskite oxide thin films, especially PZT thin films, can be exploited in semiconductor devices to achieve non-volatile random access memory (NVRAM) with high-speed access and long endurance, which can overcome the barriers, encountered in current semiconductor memory technologies. The ferroelectricity can be also exploited to voltage depe…